United Monolithic Semiconductors CHA8612-QDB high power amplifier
The CHA8612-QDB is a gallium nitride on silicon carbide, radio frequency power amplifier from United Monolithic Semiconductors, operating between 7.9 and 11 GHz.
The two-stage high power amplifier provides 18 W (typical) of saturated output power and 40% power-added efficiency. The integrated circuit is manufactured with a GaN HEMT process, 0.25 µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
With linear gain of 26 dB, the product is versatile for a wide range of applications, from military to commercial radar and communication systems.
Phone: 001 630 262 6800
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